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| Freescale Semiconductor Technical Data Will be replaced by MMG2001NT1 in Q305. N suffix indicates 260C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. Document Number: MMG2001 Rev. 3, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features * Specified for 79 -, 112 - and 132 -Channel Loading * Excellent Distortion Performance * Higher Output Capability * Built-in Input Diode Protection * GaAs FET Transistor Technology * Unconditionally Stable Under All Load Conditions * In Tape and Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel. Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler Amplifier Module MMG2001T1 870 MHz 21 dB GAIN 132 -CHANNEL CATV INTEGRATED AMPLIFIER MODULE 16 1 CASE 978-03 PFP-16 Table 1. Maximum Ratings Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +70 +26 -20 to +100 -40 to +100 Unit dBmV Vdc C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 4.7 Unit C/W Pin 3 Q1 Pin 4 RS1 Pin 5 RS2 Pin 6 Q2 Pin 7 Q3 Pin 15 N.C. N.C. VG1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VD3 N.C. VGC N.C. VD4 N.C. N.C. RG3 Pin 13 VS1 VC VS2 VG2 N.C. RG4 Q4 Pin 11 (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Diagram Figure 2. Pin Connections Freescale Semiconductor, Inc., 2005. All rights reserved. MMG2001T1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (minimum) M1 (minimum) C5 (minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 40 MHz 870 MHz Slope 40 - 870 MHz Symbol BW Gp Min 40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 410 Typ -- 19 21 0.8 0.5 21 19 22 22 17 -68 -70 -74 -63 -62 -61 -67 -72 -71 -55 -57 -60 -51 -53 -56 -58 -60 -65 -56 -60 -66 -58 -59 -62 -64 -69 -72 4.0 4.0 4.0 4.0 425 Max 870 -- -- -- -- -- -- -- -- -- -60 -62 -66 -- -- -- -- -- -- dBc 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt 50 MHz 550 MHz 750 MHz 870 MHz XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 NF -53 -55 -58 -- -- -- -- -- -- dBc -54 -58 -64 -- -- -- -- -- -- 4.5 4.5 4.5 4.5 440 dB dB dB dB Unit MHz dB S GF IRL Gain Flatness (40 - 870 MHz, Peak to Valley) Input Return Loss (Zo = 75 Ohms) f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz f = 40-400 MHz f = 401-870 MHz 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt Output Return Loss (Zo = 75 Ohms) Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Noise Figure ORL dB dBc CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 DC Current (VDC = 24 V, TC = 45C) IDC mA MMG2001T1 2 RF Device Data Freescale Semiconductor C7 R9 C5 Pin 3 Pin 4 Pin 5 Pin 6 C1 R12 C6 C4 Pin 7 R13 Pin 15 C10 R11 C3 RF INPUT T1 T2 Pin 13 R15 R16 VCC D3 Pin 11 R17 D2 C9 T3 RF OUTPUT C11 R10 R1 R18 R2 D1 R4 R3 R6 Q2 C2 R5 R7 C8 R14 Q1 R8 Figure 3. MMG2001T1 50 -870 MHz Test Circuit Schematic Table 6. MMG2001T1 50 -870 MHz Test Circuit Component Designations and Values Designation C1, C7, C8, C11 C2, C3, C4, C9, C10 C5, C6 D1 D2 D3 Q1, Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10, R15 R11, R12 R13, R14 R16 R17 R18 T1 T2 T3 PCB Description 220 pF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) 5.1 V Zener Diode, On/MM3Z5V1T1 27 V Zener Diode, On/MM3Z27VT1 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 Dual Transistors Package, On/MBT3904DW1T1 2.2 kW, 1/4 W Chip Resistor (1206) 680 W Chip Resistor (0603) 180 W Chip Resistor (0603) 1600 W Chip Resistor (0603) 820 W Chip Resistor (0603) 120 W Chip Resistor (0603) 1.5 kW Chip Resistor (0603) 8 W, 1 W Chip Resistor (2512) 470 W Chip Resistors (0603) 18 W Chip Resistors (0603) 680 W Chip Resistors (0603) 2.4 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) 0 W Chip Resistor (0603) Input Transformer, 77PC016E080 Output Transformer, 77PC016E071 Output Transformer, 77PC016E072 FR4, 62 mil, r = 4.81 MMG2001T1 RF Device Data Freescale Semiconductor 3 MMG2001R2 Rev 0 R5 R7 Q1 Q2 R6 T1 R8 C2 C1 R10 R12 C4 C8 R14 R18 R9 R11 C3 C7 R13 R16 R15 C9 C B C5 C6 T2 T3 D2 C11 R17 C10 R3 D1 R2 R1 R4 D3 GND Not Active +24 V Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MMG2001T1 50 -870 MHz Test Circuit Component Layout MMG2001T1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -60 CTB, COMPOSITE TRIPLE BEAT (dBc) 60 dBmV -65 -70 58 dBmV 56 dBmV 52 dBmV 50 dBmV 48 dBmV -75 -80 -85 0 54 dBmV 79 Channels, 13.5 dB Tilt @ 870 MHz 200 400 600 f, FREQUENCY (MHz) Figure 5. Composite Triple Beat versus Frequency CSO, COMPOSITE SECOND ORDER (dBc) -70 60 dBmV -75 58 dBmV 56 dBmV -80 48 dBmV 52 dBmV 50 dBmV 54 dBmV -85 -90 0 79 Channels, 13.5 dB Tilt @ 870 MHz 200 400 600 f, FREQUENCY (MHz) Figure 6. Composite Second Order versus Frequency XMD, CROSS MODULATION DISTORTION (dBc) -55 -60 -65 -70 -75 -80 -85 -90 0 48 dBmV 200 400 600 52 dBmV 50 dBmV 79 Channels, 13.5 dB Tilt @ 870 MHz 60 dBmV 58 dBmV 56 dBmV 54 dBmV f, FREQUENCY (MHz) Figure 7. Cross Modulation Distortion versus Frequency MMG2001T1 RF Device Data Freescale Semiconductor 5 NOTES MMG2001T1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS h X 45 _ A E2 1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100 14 x e D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb Y A A2 M b1 c DATUM PLANE SEATING PLANE H C L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978-03 ISSUE C PFP -16 RF Device Data Freescale Semiconductor EEE CCC EEE CCC b aaa M c1 CA S SECT W-W MMG2001T1 7 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MMG2001T1 8Rev. 3, 7/2005 Document Number: MMG2001 RF Device Data Freescale Semiconductor |
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